Further, both applications provide limits of IEC6 C class standard. It is concluded from the application that the SiC-based driver gives better results than the Si-based driver on the basis of THD and efficiency. With the experimental setup, the total harmonic distortion (THD) of grid voltage and current, power LED voltage and current, switch voltage, and input side inductor current are shown for both the SiC and Si MOSFETs and compared. In addition, the input side inductor of the converter is operated in discontinuous conduction mode, and the switching frequency of the power switch is 57 kHz. The power LED model derived in this paper is used for the PI parameter selection process. Moreover, PI control parameters are selected by genetic algorithm to avoid a complex mathematical procedure for controller design. A current sensor is added to limit maximum current. The application is conducted using a dsPIC30F4011 microcontroller including PI voltage control. For the power switch of the PFC isolated Ćuk converter, traditional Si and silicon carbide (SiC) MOSFETs, which are wide bandgap semiconductors, are used and compared. In this paper, the application and design of a high-power factor isolated Ćuk converter-based LED driver are realized for up to 50 W power.
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